Dr. Shashank Kumar Dubey
Assistant Professor, Department of Electronics and Communication Engineering
Professional Summary
Dr. Shashank Kumar Dubey is an accomplished academic and researcher specializing in VLSI Design, Microelectronics, and Nanoelectronics. With a Ph.D. from the Birla Institute of Technology, Mesra, and an extensive publication record, he has made significant contributions to the field of emerging nanoelectronics and high-speed devices and circuits, particularly in HEMT design for communication systems. His expertise spans VLSI CAD for nanoscale silicon and III–V technologies, emphasizing innovation in low-noise, high-frequency applications.
Academic Qualifications
- Ph.D: Semiconductor Devices , Birla Institute of Technology, Mesra, Ranchi, India, 2023.
- M.E: Wireless Communication, Birla Institute of Technology, Ranchi, India, 2018.
- B.Tech. in ECE, Dr. A.P.J. Abdul Kalam Technical University , Lucknow, UP, India, 2014.
Research Areas
- VLSI Design
- Microelectronics
- Nanoelectronics
- CAD for Nanoscale Silicon and III–V Technologies
- High-Speed Devices and Circuits, including High Electron Mobility Transistors
Publications
- Springer Article
- Optik Journal
- Microsyst Technol
- IEEE Access
- Microsyst Technol
- Microsyst Technol
- Microsyst Technol
- IOP Science
- Wiley Journal
- Springer Article
- Engineering Research Express
- Springer Article
- Springer Article
- Springer Article
Conference Papers
Book Chapters
- Advances in Energy and Control Systems
- Heart Problem Prediction Using ML
- High Frequency AlGaN/GaN-Based HEMT
- Nanoelectronics: Physics, Materials and Devices
Patents
- Granted Patent: Patent Status
- Filed Patent: Patent Details
Collaborations
- Indian Universities: Birla Institute of Technology, Mesra, Ranchi; VIT, Chennai; KL University, Vijayawada
- Foreign Universities: University of Warwick, Coventry, U.K.; University of Louisiana at Lafayette, USA
Achievements
- Most-Cited Paper: "Characterization of AlGaN/GaN based HEMT for low noise and high frequency application," International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley)
- Best Paper Award: "Al 0.30 Ga 0.70 N/GaN Based HEMT with n-GaN Cap Layer for Satellite Communication System" at ESDA-2021
- Best Paper Award: "Influence of AlN Spacer Layer SiN Passivated AlGaN/GaN HEMT" at Micro-2018
- DRDO Fellowship: Defence Research and Development Organization (DRDO), Govt. of India Grant for 3 Years Fellowship at BIT, Mesra, Ranchi (2018-2021)
- MHRD Fellowship: Ministry of Human Resource Development, Govt. of India Grant for 2 Years M.Tech. Program at BIT, Mesra, Ranchi (2016-2018)
Contact Information
- Email: shashankdubey@gat.ac.in